Investigating the effect of roughness on the tunneling and statistical properties of tantalum thin layers grown using nitrogen ions

مهندسی متالورژی و مواد

Volume 35, Issue 1 - Serial Number 33, April 2024, Pages 11-22   

Document Type: Original Articles

DOI: 10.22067/jmme.2023.82763.1113

Authors

amir hoshang ramezani^* ; Zhaleh Ebrahiminejad

Department of Physics, West Tehran Branch, Islamic Azad University, Tehran, Iran.

Abstract

In this article, the effect of ion type on the transport properties of the structures whose common phases were created by the tantalum-based ion bombardment process has been investigated. The nitrogen ions used in the ion seeding process are considered with an energy of 30 kV and in different doses at ambient temperature. To study the morphology of the surfaces of ion bombarded thin layers, atomic force microscope (AFM) analysis was used and the amount Average roughness is determined. The results show that the common seasons produced by nitrogen ion bombardment have more effects on the transport characteristics. Also, the peak-to-valley ratio decreases. In addition, with the increase of the nitrogen ion dose, the current density has decreased as a function of the voltage, although this decrease is a direct result of the dispersion caused by the existence of unevenness, but the process of this decrease does not follow a specific order for different doses, example sample number one indicates a higher probability of passing. The results show that determining the amount of dose plays an important role in determining the amount of transport characteristics through uneven thin layers.

Keywords

Interfacial; Roughness; Statistical; Tantalum

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