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Kamali, Mohammadi, Hosseini, Seyed Ebrahim. (1393). Investigation of a SiGe tunnel FET: comparison to Si and Ge TFETs. سامانه مدیریت نشریات علمی, 2(1), 21-26. doi: 10.22067/ess.v2i1.31860
Mohammadi Kamali; Seyed Ebrahim Hosseini. "Investigation of a SiGe tunnel FET: comparison to Si and Ge TFETs". سامانه مدیریت نشریات علمی, 2, 1, 1393, 21-26. doi: 10.22067/ess.v2i1.31860
Kamali, Mohammadi, Hosseini, Seyed Ebrahim. (1393). 'Investigation of a SiGe tunnel FET: comparison to Si and Ge TFETs', سامانه مدیریت نشریات علمی, 2(1), pp. 21-26. doi: 10.22067/ess.v2i1.31860
Kamali, Mohammadi, Hosseini, Seyed Ebrahim. Investigation of a SiGe tunnel FET: comparison to Si and Ge TFETs. سامانه مدیریت نشریات علمی, 1393; 2(1): 21-26. doi: 10.22067/ess.v2i1.31860

Investigation of a SiGe tunnel FET: comparison to Si and Ge TFETs

Journal Of Electrical Systems And Signals
مقاله 3، دوره 2، شماره 1، تیر 2014، صفحه 21-26    اصل مقاله (258.92 K)
نوع مقاله: Researsh Articles
شناسه دیجیتال (DOI): 10.22067/ess.v2i1.31860
نویسندگان
Mohammadi Kamali* 1؛ Seyed Ebrahim Hosseini2
1Hakim Sabzevari
2Ferdowsi University of Mashhad
چکیده
In this paper a SiGe p+n+in+ tunneling transistor is studied and compared with Si and Ge based transistors. Moreover, in the proposed structure a -doped n+ region is considered between the source and the channel, and this region is optimized in the sense of region width (Wd) and doping level for the highest ratio of on-current to off-current and the lowest sub-threshold swing. Simulations show that Ion/Ioff ratio greater than 11 order of magnitude and sub-threshold swing of 16.6 mv/dec, which is well below 60 mv/dec limit of conventional MOSFETs, are obtained.
کلیدواژه‌ها
Tunnel FET؛ I_on/I_off ratio؛ Band-to-Band tunnelling؛ off-current؛ sub-threshold swing
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