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Investigation of a SiGe tunnel FET: comparison to Si and Ge TFETs | ||
| Journal Of Electrical Systems And Signals | ||
| مقاله 3، دوره 2، شماره 1، تیر 2014، صفحه 21-26 اصل مقاله (258.92 K) | ||
| نوع مقاله: Researsh Articles | ||
| شناسه دیجیتال (DOI): 10.22067/ess.v2i1.31860 | ||
| نویسندگان | ||
| Mohammadi Kamali* 1؛ Seyed Ebrahim Hosseini2 | ||
| 1Hakim Sabzevari | ||
| 2Ferdowsi University of Mashhad | ||
| چکیده | ||
| In this paper a SiGe p+n+in+ tunneling transistor is studied and compared with Si and Ge based transistors. Moreover, in the proposed structure a -doped n+ region is considered between the source and the channel, and this region is optimized in the sense of region width (Wd) and doping level for the highest ratio of on-current to off-current and the lowest sub-threshold swing. Simulations show that Ion/Ioff ratio greater than 11 order of magnitude and sub-threshold swing of 16.6 mv/dec, which is well below 60 mv/dec limit of conventional MOSFETs, are obtained. | ||
| کلیدواژهها | ||
| Tunnel FET؛ I_on/I_off ratio؛ Band-to-Band tunnelling؛ off-current؛ sub-threshold swing | ||
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آمار تعداد مشاهده مقاله: 338 تعداد دریافت فایل اصل مقاله: 209 |
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