انتقال گرمای نانوسیال در یک کانال دارای میدان مغناطیسی و مانع متخلخل با استفاده از مدل دارسی-برینکمن - فرچهیمر در روش شبکة بولتزمن

علوم کاربردی و محاسباتی در مکانیک

مقاله 9، دوره 32، شماره 1 - شماره پیاپی 23، 1399، صفحه 153-172   

نوع مقاله: مقاله پژوهشی

شناسه دیجیتال (DOI): 10.22067/jacsm.2021.56842.0

نویسندگان

ساعد بازخانه؛ ایمان زحمت کش^*

گروه مکانیک، واحد مشهد، دانشگاه آزاد اسلامی، مشهد، ایران.

چکیده

در مقاله حاضر، اختلاط در جریان‌ الکترواسموتیک در حضور یک میدان مغناطیسی با سه موقعیت مختلف مکانی به‌صورت عددی مطالعه و شبیه‌سازی شده است. هندسه جریان یک مجرای دوبعدی بین دو صفجه موازی است و جریان مورد نظر تراکم ناپذیر، دائم و آرام فرض شده است. معادلات حاکم بر مسأله، شامل معادلات اندازه حرکت اصلاح شده (ناویر-استوکس) برای میدان جریان سیال، معادلات میدان‌های پتانسیل الکتریکی خارجی و داخلی، معادلات توزیع غلظت یون‌های مثبت و منفی (ارنست-پلانک)، معادله میدان مغناطیسی و معادله‌ی غلظت گونه‌ها به روش عددی حجم محدود حل شده است.به منظور اعتبارسنجی برنامه عددی، یک جریان ایده‌آل الکترواسموتیک که در آن سراسر دیواره‌ها باردار می‌باشد، شبیه‌سازی گردیده است و نتایج آن با نتایج تحلیلی موجود مقایسه شده است.نتایج عددی نشان می‌دهد که در حضور یک میدان مغناطیسی برای جریان در یک ریزمجرا، راندمان اختلاط نسبت به حالت عدم حضور میدان مغناطیسی افزایش چشم‌گیری می‌یابد، به طوری که راندمان اختلاط نهایی حداکثر به 3/93 درصد می‌رسد. البته این در حالی است که میدان مغناطیسی قبل از لایه دوگانه الکتریکی اعمال شده باشد.

کلیدواژه‌ها

میدان مغناطیسی؛ محیط متخلخل؛ روش شبکه بولتزمن؛ مدل دارسی-برینکمن-فرچهیمر؛ روش تاگوچی

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